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FDP3205 N-Channel PowerTrench(R) MOSFET
May 2008
FDP3205
Features
N-Channel PowerTrench(R) MOSFET
55V, 100A, 7.5m Description
* This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
* RDS(on) = 6.1m ( Typ.)@ VGS = 10V, ID = 59A * High performance trench technology for extermly low RDS(on) * High power and current handing capability * RoHS compliant
D
GDS
TO-220 FDP Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed (Note 2) (Note 1) Ratings 55 20 100 390 365 150 1.0 -55 to +175 Units V V A A mJ W W/oC
oC
Operating and Storage Temperature Range
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 1.0 62.5 Units
oC/W
(c)2008 Fairchild Semiconductor Corporation FDP3205 Rev. A
1
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FDP3205 N-Channel PowerTrench(R) MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDP3205 Device FDP3205 Package TO-220 Reel Size Tape Width Quantity 50units
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC VDS = 44V, TC = 150oC VGS = 20V, VDS = 0V VDS = 44V, VGS = 0V 55 25 250 100 V A nA
On Characteristics
VGS(th) RDS(on) Gate Threshold Voltage Static Drain to Source On Resistance VGS = VDS, ID = 250A VGS = 10V, ID = 59A VGS = 10V, ID = 59A TJ = 175oC 3.5 6.1 12 5.5 7.5 m V
Dynamic Characteristics
Ciss Coss Crss RG Qg(tot) Qg(th) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V f = 1MHz VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VDS = 44V ID = 59A Ig = 1mA 3 5810 460 230 4 93 25.5 35 9.5 32 7730 610 345 5 120 33 pF pF pF nC nC nC nC nC
Switching Characteristics
tON td(on) tr td(off) tf tOFF Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time VDD = 28V, ID = 59A VGS = 10V, RGEN = 2.5 170 23 147 42 18 60 350 56 305 94 46 130 ns ns ns ns ns ns
Drain-Source Diode Characteristics
VSD trr Qrr Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 59A VGS = 0V, ISD = 59A dIF/dt = 100A/s 43.3 70.8 1.3 V ns nC
Notes: 1: Calculated continuous current based on maximum allowable junction temperature. Package limited to 75A continuous, see Figure 9. 2: L = 0.21mH, IAS = 59A, VDD = 50V, VGS = 10V, RG = 25, Starting TJ = 25oC
FDP3205 Rev. A
2
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FDP3205 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
500
VGS = 15.0V 10.0V 8.0 V 7.5 V 7.0 V 6.5 V
Figure 2. Transfer Characteristics
500
ID,Drain Current[A]
ID,Drain Current[A]
100
150 C
o o
100
-55 C
o
10
25 C
*Notes: 1. 250s Pulse Test
10 0.2
2. TC = 25 C
o
1
3
*Notes: 1. VDS = 20V 2. 250s Pulse Test
1 VDS,Drain-Source Voltage[V]
4
5
6 7 8 VGS,Gate-Source Voltage[V]
9
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.02
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
500
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
100
150 C 25 C
o o
0.01
VGS = 10V
10
VGS = 20V
0.00
*Note: TJ = 25 C
o
*Notes: 1. VGS = 0V
0
100 200 300 ID, Drain Current [A]
400
1 0.0
2. 250s Pulse Test
0.4 0.8 1.2 1.6 1.7 VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
8000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 14V VDS = 28V VDS = 44V
6000
Capacitances [pF]
Ciss
8
4000
*Note: 1. VGS = 0V 2. f = 1MHz Coss
6
4
2000
Crss
2
*Note: ID = 59A
100 0.1
1 10 VDS, Drain-Source Voltage [V]
30
0
0
20 40 60 80 Qg, Total Gate Charge [nC]
100
FDP3205 Rev. A
3
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FDP3205 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.15
BVDSS, [Normalized] Drain-Source Breakdown Voltage
RDS(on), [Normalized] Drain-Source On-Resistance
Figure 8. On-Resistance Variation vs. Temperature
2.5
1.10
2.0
1.05
1.5
1.00
1.0
0.95
*Notes: 1. VGS = 0V 2. ID = 250A
0.5
0.90 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
0.0 -100
*Notes: 1. VGS = 10V 2. ID = 59A
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
500
100s 1ms 10ms DC 10s
Figure 10. Maximum Drain Current vs. Case Temperature
120
ID, Drain Current [A]
100
ID, Drain Current [A]
o o
80
10
Operation in This Area is Limited by R DS(on)
40
1
*Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
0.1
1
10 VDS, Drain-Source Voltage [V]
100
0 25
50 75 100 125 150 o TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
2 1
Thermal Response [ZJC]
0.5 0.2
0.1
0.1 0.05 0.02 0.01
PDM t1 t2
o
*Notes: 1. ZJC(t) = 1.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
0.01
Single pulse
0.05 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
1
10
FDP3205 Rev. A
4
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FDP3205 N-Channel PowerTrench(R) MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP3205 Rev. A
5
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FDP3205 N-Channel PowerTrench(R) MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDP3205 Rev. A
6
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FDP3205 N-Channel PowerTrench(R) MOSFET
Mechanical Dimensions
TO-220
FDP3205 Rev. A
7
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FDP3205 N-Channel PowerTrench(R) MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
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The Power Franchise(R)
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* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDP3205 Rev. A
8
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